Shenzhen Graduate School made progress in the study of quantum dot sensitized solar cells
With the rapid development of the world economy, the demand for energy is increasing day by day. As a non-renewable energy, fossil fuels can no longer meet the global energy consumption. Therefore, it is the common goal of all countries in the world to find renewable energy that is highly efficient and environmentally friendly. Quantum Dot Sensitized Solar Cells (QDSSCs) are widely regarded as one of the most promising new solar cells. However, at present, the photoelectric conversion efficiency still can not meet the commercial requirements, so how to further improve the photoelectric conversion efficiency has become an important issue in current QDSSCs research. In recent years, it has been found that interfacial buffer layer modification plays a key role in improving the photoelectric conversion efficiency of QDSSCs. Since QDSSCs absorb light, the separation of electrons and holes occurs not only at the quantum dots themselves but also at the interface between the buffer layer and the photoanode. Therefore, the performance of QDSSCs depends not only on the electronic level structure of the QDs, but also on the electron level structures of the buffer layer and the photoanode interface. Therefore, the buffer layer and the photoanode interface properties in-depth study and micro-understanding is very important. Recently, Prof. Pan Feng from PKU College of Materials Science and Technology cooperated with Prof. Lin Yuan of the Institute of Chemistry, Chinese Academy of Sciences. Through the first principles and experiments, it was found that the photoelectric conversion properties of TiO2 / CdS / CdSe QDSSCs can be controlled by liquid atomic layer technology Layer atomic layer to achieve the highest efficiency can reach 6%, close to the highest level of the system (6.01%). They found that with the increase of CdS layers, on the one hand, the bandgap of CdS decreases and the conduction band of CdS moves downward at the bottom. On the other hand, the dipole action of TiO2 / CdS interface increases and more electrons are injected into TiO2, The bottom of the conduction band moves upward, resulting in rearrangement of the respective energy levels at the interface. Therefore, the QDSSCs open-circuit voltage and short-circuit current can be achieved by adjusting the number of layers of the buffer layer. These findings will provide important clues and guidance for how to optimize the interface properties of buffer layers to improve the performance of QDSSCs in the future. This work was recently published by the internationally renowned journal Chemical Communications (DOI: 10.1039 / C6CC01664B), with Zhang Bingkai and Zheng Jiaxin from PKU New Material Institute and Dr. Li Xiaoning from the Chinese Academy of Sciences as co-authors. Professor Pan Feng and Professor Lin Yuan is co-author.
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